ACTIVE ELEMENT INCLUDING THIN FILM HAVING DEEP ENERGY LEVEL IMPURITY IN COMBINATION WITH ELECTROSTRICTION THIN FILM

摘要

1,149,589. Semi-conductor transducers. MATSUSHITA ELECTRIC INDUSTRIAL CO. 30 Oct., 1967 [15 Nov., 1966], No. 49283/67. Heading H1K. A solid state device having an amplifying action comprises a piezoresistive element constituted by a thin film of a semi-conductor or insulator containing a deep-level impurity, the element being acted on by wave energy from a piezoelectric transducing element constituted by a second thin film. The output may be taken from two or more ohmic or rectifying contacts. One specific device has a tantalum substrate bearing a vapour-deposited copperdoped silicon layer with a vapour-deposited indium top electrode which acts as a common electrode for this piezoresistive element and for a vapour deposited cadmium sulphide vibrator provided with a second indium electrode. Another device has a doped layer on an insulating substrate 31, electrodes 33 deposited sideby-side on the layer, an insulating layer 34 on this structure, and a vibrator 35, 36, 37 formed on this. The Specification lists several materials suitable as vibrators.