Laser-induced thermal desorption studies of surface reaction kinetics

摘要

Abstract: Laser induced thermal desorption (LITD) has proven to be an effective probe of reaction kinetics on single-crystal surfaces. The ability of LITD techniques to measure adsorption, decomposition and desorption kinetics will be illustrated by studies of SiCl$-4$/ and (CH$- 3$/CH$-2$/)$-2$/ SiH$-2$/ on Si(111)7$MUL@7. Silicon tetrachloride, SiCl$-4$/, is important in silicon epitaxial growth and diethylsilane, (CH$-3$/CH$-2$/)$-2$/ SiH$-2$/, is a promising candidate for silicon atomic layer epitaxy. The desorption products, sticking coefficients and decomposition and desorption kinetics measured by these LITD investigations are important for an understanding of silicon epitaxy by chemical vapor deposition. !