Studies of Chemistry and Diffusion on Silicon and Gallium Arsenide Surfaces Using Laser-Induced Thermal Desorption.

摘要

Surface chemistry and surface diffusion play pivotal roles in semiconductor processing and must be understood as electronic device dimensions approach the submicron level. In this project, basic time-dependent processes on silicon surfaces were examined using laser induced thermal desorption (LITD) and Fourier transform infrared (FTIR) spectroscopy. These techniques provided direct, quantitative measurements of surface coverage in real-time. Using LITD and FTIR techniques, emphasis was on a microscopic understanding of semiconductor surface reaction kinetics. (jes)