Iron Diffusion Profile Studies by Surface Photo-Voltage for Silicon Iron Implanted Wafers After Rapid Thermal Anneal

摘要

Two-side Surface Photovoltage (TS-SPV) based on measuring SPV from both wafer sides is proposed as novel approach for silicon surface contamination monitoring. TS-SPV is applied to investigate the process of diffusion of implanted iron in lightly doped p-type silicon during Rapid Thermal Anneal (RTA). Good correlation was found for iron distribution vs. RTA conditions in the temperature range from 375 to 1100°C. The portion of electrically active interstitial iron measured by TS-SPV was studied as function of RTA time and temperature conditions. Low thermal budget RTA combined with TS-SPV is proven to be effective to monitor iron contamination and to identify the contamination sources character and location.