A comparison of the carrier density at the surface of quantum wells for different crystal orientations of silicon, gallium arsenide, and indium arsenide

摘要

We report the carrier densities at the surface of single-crystal quantum wells as a function of material, orientation, and well width. We include wells constructed from silicon, gallium arsenide, and indium arsenide with three crystal orientations, (100), (110), and (111), included for each material. We find that the Δ_2 states in a silicon (100) quantum well have the smallest density near the surface of the slab. Inspection of the planar average of the carrier densities reveals a characteristic shape that depends on the material and orientation, which leads to a varying degree of suppression or enhancement of the density near the surface. The physics responsible for the suppression or enhancement of the density near the surface can be traced to a constraint imposed by the symmetry of quantum well wavefunction on the phases of the bulk Bloch states of the crystal from which it can be constructed.