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Substrate independent highly metallic TiN films fabricated by pulsed laser depositionmethod for plasmonic device applications

机译:脉冲激光沉积法制备的用于等离子体器件的与基底无关的高金属TiN膜

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Titanium nitride (TiN) has been one of the most investigatedcompound plasmonic materials so far.1,2 However, itsplasmonic properties are worse than noble metals whichhave been used conventionally. Even the TiN films fabricatedat high temperature on lattice matched substrateshave inferior plasmonic properties compared to noble metals.3 Indeed, so far the major advantages of TiN againstnoble metals are only cost.
机译:迄今为止,氮化钛(TiN)一直是研究最多的化合物等离子材料之一。1,2但是,其等离子性能比常规使用的贵金属差。甚至在高温下在晶格匹配衬底上制备的TiN薄膜也具有比贵金属低的等离子体性能。3的确,到目前为止,TiN对抗贵金属的主要优点仅仅是成本。

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    International Center for Materials Nanoarchitectonics (WPI-MANA) National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba Ibaraki305-0044 Japan;

    Namiki Foundry National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan;

    International Center for Materials Nanoarchitectonics (WPI-MANA) National Institute for Materials Science (NIMS) 1-1 Namiki Tsukuba Ibaraki305-0044 Japan Department of Condensed Matter Physics Graduate School of Science Hokkaido University Kita-10 Nishi-8 Kita-ku Sapporo 060-0810 Japan;

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