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Growth of highly oriented (Hg, Pb)-based superconducting thin films on LaA103 substrates by pulsed-laser ablation

机译:通过脉冲激光烧蚀在LaA103衬底上生长高取向(Hg,Pb)基超导薄膜

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The discovery of the homologous series of HgBa2Can-1CunB02n+2+d (Hg-12(n - l)n, n = l, 2, 3, ...) has attracted considerable attention since they raised the superconducting critical temperature, T, to record values of 134 K at ambient pressure and 164 K at 30GPa pressure [1, 2]. Thus high-quality Hg-based thin films are desirable from the view points of both basic research and technological applications. The main difficulty in synthesizing such thin films is the high volatility of Hg and Hg-based compounds. Following the so far most successful way to overcome this volatility problem [3-9], which is similar to that used for preparing Hg-based ceramics, we fabricated precursor films first and then annealed them in a controlled Hg atmosphere. Furthermore, as several studies demonstrated that partly substitution of lead for mercury could prevent rapid evaporation of mercury to promote the formation of the superconducting phase and that proper Pb doping could enhance the Tc of Hg-based compounds [10-12], we decided to use a superconducting Hgo.7Pbo.3Ba2Ca2Cu3O.-c target in the fabrication. In this letter we discuss the details of the fabrication and the films' properties.
机译:HgBa2Can-1CunB02n + 2 + d(Hg-12(n-l)n,n = l,2,3,...)的同源系列的发现引起了人们的极大关注,因为它们提高了超导临界温度T ,以在环境压力下记录134 K,在30GPa压力下记录164 K的值[1、2]。因此,从基础研究和技术应用的观点出发,期望高质量的基于Hg的薄膜。合成此类薄膜的主要困难是Hg和Hg基化合物的高挥发性。遵循迄今为止最成功的克服此挥发性问题的方法[3-9],该方法类似于制备基于汞的陶瓷所使用的方法,我们首先制造了前体膜,然后在受控的汞气氛中对其进行了退火。此外,正如数项研究表明,用铅部分替代汞可以阻止汞的快速蒸发以促进超导相的形成,并且适当的Pb掺杂可以提高Hg基化合物的Tc [10-12]。在制造过程中使用Hgo.7Pbo.3Ba2Ca2Cu3O.-c超导靶。在这封信中,我们讨论了制造的细节以及薄膜的性能。

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