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Chemically Assembled InP@ZnS Quantum Dot Single-Electron Transistor

机译:化学组装的InP @ ZnS量子点单电子晶体管

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Recently, as transistor scaling has been stalled and its performance improvement has been limited, there have been strong demands for development of new types of transistor. In this respect, single-electron transistors (SETs) is expected as one of the strong candidates for switching devices because of small size, low power consumption, high speed operation, single-electron sensitivity and adoption of multi-gate logic circuits. We have demonstrated logic operations of SETs by using the critical dimensional electroless Au plated (ELGP) nanogap electrodes with 40 nm scale in linewidth and Au nanoparticles (NPs) as Coulomb island [1,2], However, it is still necessary to reduce electrode linewidth toward less than sub-20nm for obtaining larger gate capacitance. Moreover, our ELGP nanogap electrodes have limitation in fabrication of the fine patterned electrodes with sub-20 nm linewidth due to Rayleigh instability. In this point of view, Pt is a good candidate material for the robust and fine patterned initial electrodes with sub-20nm linewidth against Rayleigh instability. Furthermore, new types of NPs instead of Au NPs as Coulomb island need to be considered for the unique electrical characteristics and the additional functionality. In this respect, colloidal quantum dots (QDs) could be one of the interesting candidates of NPs as Coulomb islands owing to their tailored size and electronic/optical properties by simple QDs growth control.
机译:近来,由于晶体管缩放已被停止并且其性能改进受到限制,因此对开发新型晶体管的强烈需求。在这方面,由于小尺寸,低功耗,高速运行,单电子灵敏度和采用多栅极逻辑电路,单电子晶体管(SET)有望成为开关设备的强大候选者之一。我们已经通过使用线宽为40 nm的临界尺寸化学镀金(ELGP)纳米间隙电极和作为库仑岛的金纳米颗粒(NP)展示了SET的逻辑操作[1,2],但是,仍然有必要减少电极数量线宽小于20nm以下以获得更大的栅极电容。此外,由于瑞利不稳定性,我们的ELGP纳米间隙电极在线宽小于20 nm的精细图案化电极的制造方面存在局限性。从这个角度来看,Pt是坚固耐用的精细图案化初始电极的理想候选材料,其抗瑞利不稳定性的线宽小于20nm。此外,由于独特的电气特性和附加功能,需要考虑使用新型NP代替Au NP作为库仑岛。在这方面,由于通过简单的QD生长控制量身定制的尺寸和电子/光学特性,胶体量子点(QD)可能成为NPs的有趣候选之一,成为库仑岛。

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