Single-electron transistors based on self-assembled silicon-on-insulator quantum dots

摘要

We present an approach to fabricate single-electron devices consisting of a silicon quantumndot u0001QDu0002 between metallic leads. Silicon QDs are obtained by reactive ion etching into ansilicon-on-insulator substrate partially protected by a self-assembled etch mask. Electrodes arenfabricated and aligned to the QDs by an electromigration process whereby their native oxide servesnas tunneling barrier. The devices show Coulomb blockade corresponding to a charging energy ofn19.4 meV and can be switched from the nonconducting to a conducting state giving rise to Coulombndiamonds. The behavior is well reproduced by a numerical orthodox theory calculation.