Single-electron transistor spectroscopy of InGaAs self-assembled quantum dots

摘要

A single-electron transistor (SET) is used to detect tunneling of single electrons into individual InGaAs self-assembled quantum dots (QDs). By using an SET with a small island area and growing QDs with a low density we are able to distinguish and measure three QDs. The bias voltage at which resonant tunneling into the dots occurs can be shifted using a surface gate electrode. From the applied voltages at which we observe electrons tunneling, we are able to measure the electron addition energies of three QDs. (C) 2003 Elsevier B.V. All rights reserved.