Department of Applied Physics, Hokkaido University, PRESTO JST,rnN13W8 Kita-ku, Sapporo, Japan;
Research Center for Advanced Science and Technology,rnInstitute of Industrial Science, University of Tokyo,rn4-6-1 Komaba, Meguro-ku, Tokyo, Japan;
Research Center for Advanced Science and Technology,rnInstitute of Industrial Science, University of Tokyo,rn4-6-1 Komaba, Meguro-ku, Tokyo, Japan;
Research Center for Advanced Science and Technology,rnInstitute of Industrial Science, University of Tokyo,rn4-6-1 Komaba, Meguro-ku, Tokyo, Japan;
Research Center for Advanced Science and Technology,rnInstitute of Industrial Science, University of Tokyo,rn4-6-1 Komaba, Meguro-ku, Tokyo, Japan;
机译:用光致发光激发光谱法研究具有In_(0.3)Ga_(0.7)As / GaAs量子点的自组装系统中的载流子转移过程
机译:用光致发光激发光谱研究自组装GeSi / Si量子点的空间直接和间接跃迁
机译:用光致发光激发光谱研究自组装GeSi / Si量子点的空间直接和间接跃迁
机译:CDSE / ZnSE和CDTE / ZnTe自组装量子点的共振光致发光和激发光谱
机译:自组装半导体量子点的共振激光光谱和光子统计
机译:交叉态对InAs量子点光致发光激发光谱的影响
机译:利用光致发光激发光谱法研究In 0.3 sub> Ga 0.7 sub> As / GaAs量子点在自组装系统中的载流子转移过程