Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot

摘要

This paper describes the room-temperature (RT) demonstration of a newly proposed highly-functional single-electron transistor (SET) logic based on the quantum mechanical effect. We fabricate single-hole transistors (SHTs) in the form of extremely constricted channel MOSFETs and obtain large Coulomb blockade (CB) oscillations with a peak-to-valley current ratio (PVCR) of 10/sup 2/ at RT. In the fabricated single-dot SHTs, clear negative differential conductance (NDC) with a PVCR of 11.8 (highest ever reported) is also observed at RT because of the large quantum level spacing (/spl Delta/E) in the ultrasmall dot. By combining CB and NDC, XOR operation is successfully demonstrated as a current output in just one SHT.