Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot

摘要

We analyze electron transport of silicon single- electron transistors (Si SETs) with an ultra-small quantum dot using a master-equation model taking into account the discrete- ness of quantum levels and the finiteness of scattering rates. In the simulated SET characteristics, aperiodic Coulomb blockade oscillations, fine structures and negative differential conductances due to the quantum mechanical effects are superimposed on the usual Coulomb blockade diagram.