Investigation on p-BaSi2/n-Si heterojunction solar cells using a Si(OOl) substrate

摘要

Barium disilicide (BaSi2) shows great potential in solar cell applications as it has attractive features such as a suitable band gap, alarge absorption coefficient, alarge minority-carrier lifetime (τ ~10 μs) and alarge minority-carrier diffusion length (L ~1μm)[1]. In our previous work, we successfully grew boron (B)-doped p-BaSi2 on a flat n-Si(111) substrate and a textured Si(001) substrate with a pyramid structure consisting of {111} facets to form pn junction solar cells with an efficiency (η） of 9.9% and 4.6%, respectively [2][3]. To explore the potential of a Si(001) surface for p-BaSi2/n-Si heterojunction solar cells, in this study, we fabricated p-BaSi2 films on a Si(001) substrate.