Effect of Conduction Band Offset on Breakdown Voltage at SiO_2/4H-SiC (000-1) studied by Hard X-ray Photoelectron Spectroscopy

摘要

SiC has attracted a great interest in the application of high power devices due to its wide band gap and the easiness of oxide layer formation, that is SiO_2, by thermal oxidation procedure. 1,2 However, the high-density interface states and small conduction band offset of SiO_2/SiC-based electronic devices still hamper the device performances.3,4 In this study, we investigated the effect of conduction band offset (ΔEc) on the breakdown voltage upon SiO_2/4H-SiC (000-1) using hard x-ray photoelectron spectroscopy (HAXPES).