Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

摘要

The valence band offset (VBO) of the wurtzite ZnO/4H-SiC heterojunction is directly determinedrnto be 1.61 ± 0.23 eV by x-ray photoelectron spectroscopy. The conduction band offset is deduced to be 1.50 ± 0.23 eV from the known VBO value, which indicates