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Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy

机译:X射线光电子能谱法测量InN / 4H-SiC异质结的价带偏移

摘要

The valence band offset (VBO) of InN/4H-SiC heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 0.55 +/- 0.23 eV and the conduction band offset is deduced to be -2.01 +/- 0.23 eV, indicating that the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets is important for applications of InN/SiC optoelectronic devices.
机译:InN / 4H-SiC异质结的价带偏移(VBO)已通过X射线光电子能谱直接测量。确定VBO为0.55 +/- 0.23 eV,并推导导带偏移为-2.01 +/- 0.23 eV,表明异质结具有I型能带对准。价和导带偏移的准确确定对于InN / SiC光电器件的应用很重要。

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