Cross-functional Optimization of Backside Metal Adhesion to GaAs

摘要

A cross-functional team was formed to investigate backside metal adhesion as die sizes shrunk in Skyworks' Newbury Park fab. Areas examined included wafer thinning, pre-seed surface treatment, metallization, UV tape exposure and storage, and die pick parameters. By making improvements in these areas, the GaAs-backside metal interface strength was increased to more than 1800g, as measured by a pull test, even for small die sizes.