Effect of Deprotection Activation Energy on Lithographic Performance of EUVL Resist

摘要

As the feature size becomes smaller, it is difficult for the lithography progress to keep pace with the acceleration of design rule shrinkage and high integration of memory device. Extreme Ultra Violet Lithography (EUVL) is a preferred solution for the 32nm node. In this paper, we have synthesized two types of polymers. One is based on hydroxy phenol, the other is based on hydrocarbon acrylate type polymer. We have diversified each polymer type according to different activation energies for deprotection reaction. In this experiment, we have observed on the resist lithographic performance such as resolution, LER (Line Edge Roughness), photo-sensitivity, and out-gassing during exposure. Different properties according to activation energy were well explained by acid diffusion and polymer free-volume.