PHASE CHANG MATERIALS DECLINING ACTIVATION ENERGY, PHASE-CHANGE MEMORY RESISTIVE ELEMENTS COMPRISING THE SAME AND PREPARATION METHOD THEREOF

摘要

The present invention relates to a phase-change material with decreased activation energy, a phase-change memory resistive element including the same, and a manufacturing method thereof. According to the phase-change material with decreased activation energy, the phase-change memory resistive element including the same, and the manufacturing method thereof, a problem that excessively high current consumption is required due to excessively high activation energy when the phase-change material is switched to a reset state is solved. In other words, in switching the phase-change material to the reset state, the excessively required current consumption in the related art is significantly lowered. When the phase-change memory resistive element is developed by using the manufacturing method of lowering the current consumption in such a manner, it is possible to apply the phase-change memory resistive element to a more flexible apparatus and device.