Phase-change material, sputter target comprising the phase-change material, method of forming phase-change layer using the sputter target, and method of manufacturing phase-change random access memory comprising the phase-change layer

摘要

Provided is a phase change material, a sputter target including the phase change material, a method of forming a phase change layer using the sputter target, and a method of manufacturing a phase change memory device including the phase change layer formed using the method. The phase change material may include fullerene, and the sputter target may include the phase change material that includes fullerene.