FORMING METHOD OF PHASE-CHANGE MATERIAL LAYER, FORMING METHOD OF PHASE-CHANGE MEMORY ELEMENT USING THE METHOD, AND PHASE-CHANGE MEMORY ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a phase-change material layer, and a method of forming a phase-change memory element using the method, and also to provide a phase-change memory element.;SOLUTION: The method of forming the phase-change material layer, the method of forming the phase-change memory element using the method and the phase-change memory element are disclosed. A phase-change pattern filling a hole without forming a void and seam can be realized by selectively-forming a phase-change material layer. Thereby, it is made possible to prevent degradation of performance of a phase-change memory element, and also materialize a phase-change memory element optimized for at least either one of high integration and power consumption reduction.;COPYRIGHT: (C)2008,JPO&INPIT