Defect reduction in ArF immersion lithography, using particle trap wafers with CVD thin films

摘要

Particle trap wafers were applied to ArF immersion lithography to reduce the immersion related defectivity. Interfacial free energy (gamma) and work of adhesion (W) between particle trap wafers and particles in immersion water explain the potential of trapping particles by the particle trap wafers. It was also found that the treated SiCN CVD wafer performed well as a particle trap wafer and may help defect reduction in immersion lithography.