首页> 外文会议>Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09 >Edge and extreme edge wafer manufacturing on 200 mm wafer: Methodology, yield challenges, cost effective solutions, limitations
【24h】

Edge and extreme edge wafer manufacturing on 200 mm wafer: Methodology, yield challenges, cost effective solutions, limitations

机译:在200 mm晶圆上进行边缘和极端边缘晶圆制造:方法,产量挑战,具有成本效益的解决方案,局限性

获取原文

摘要

In this paper we present the methodology for the extreme edge of the wafer qualification for aluminium 0.22 mum embedded EEPROM technology, as edge exclusion has moved to 2 mm. Yield challenges, cost effective solutions for the yield edge detractors, process monitoring enhancement and limitations are investigated. We discussed through examples process uniformity for CMP (chemical mechanical polishing), etch or litho processes that we have had to solve. Solutions and limitations are described for nitride residual during planarization process, spacer etch process, and shorts within connection module. Monitoring scheme is evaluated for different techniques with parameters as cost efficiency or time response. This grid has been applied to the monitoring of the improved process with a wide range of confidence level which corresponds to a real difficulty for monitoring the edge and extreme edge of the wafer.
机译:在本文中,我们介绍了用于0.22毫米嵌入式EEPROM铝技术的晶圆合格极限的方法,因为边缘排除已移至2毫米。研究了产量挑战,针对产量下降因素的经济有效解决方案,过程监控的增强和局限性。我们通过示例讨论了必须解决的CMP(化学机械抛光),蚀刻或光刻工艺的工艺均匀性。描述了在平面化工艺,间隔物蚀刻工艺以及连接模块内短路期间氮化物残留的解决方案和限制。针对不同技术评估监视方案的参数为成本效率或时间响应。该网格已用于具有广泛置信度范围的改进工艺的监视,这与监视晶圆的边缘和极端边缘的实际难度相对应。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号