首页> 外文会议>Advanced Semiconductor Manufacturing Conference, 2007 IEEE/SEMI >Novel Technique to Identify Systematic and Random Defects during 65 nm and 45nm Process Development for Faster Yield Learning
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Novel Technique to Identify Systematic and Random Defects during 65 nm and 45nm Process Development for Faster Yield Learning

机译:在65 nm和45nm工艺开发过程中识别系统和随机缺陷的新技术,可加快产量学习

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Advanced bright field inspection tools available today applied on development wafer may often result in 100 k to 1 M defects per wafer. Such defect data consist of systematic and random defects that may be yield limiting or may be just cosmetic issue with
机译:目前在显影晶片上使用的先进的明场检测工具通常会导致每个晶片产生100 k至1 M的缺陷。这样的缺陷数据由系统的和随机的缺陷组成,这些缺陷可能会限制产量,或者可能仅仅是表面上的

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