Influence of Cleaning on the Quality of the Bonding Interface in Direct Bonded Silicon Wafers

摘要

We have studied the influence of hydrophilic and hydrophobic pre-bond cleans and surface treatment of wafers on the electrical characteristics, chemical composition, crystal defects and voiding at the interface of fusion bonded silicon-on-silicon structures. Incorporation of a buried implant layer improves the electrical characteristics, but results in a deterioration of the bonding efficiency, depending strongly on the pre-join clean. The bonding yield can be improved by surface treatment of the devices and suitable modification of the cleaning process.