Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer

摘要

The effect of hydrogenation on the electrical property of a clean grain boundary (GB) in the p-type direct silicon bonded (DSB) wafers has been investigated by current—voltage (I-V) and capacitance-voltage(C-V) deconvolution. It is found that compared to the as-bonded GB, the energy distribution of interface states at the GB subjected to hydrogenation become shallower, and the hole capture cross-section can be reduced by about two orders of magnitude, while the density of GB states changes only slightly. Therefore, a significantly smaller potential barrier of GB could be obtained after hydrogenation. These results are interesting for us to understand the mechanism of hydrogen passivation of GBs in photovoltaics.