Process for structuring and cleaning partially silicided silicon wafers comprises structuring the wafers in a solution containing ammonia and hydrogen peroxide, and cleaning the wafers

摘要

Process for structuring and cleaning partially silicided silicon wafers comprises structuring the wafers in a first aqueous solution containing ammonia and hydrogen peroxide; and cleaning the wafers in a second solution containing hydrochloric acid and hydrogen peroxide. The temperature and the mixing ration of the two solutions are adjusted so that they have low etching rates with respect to the silicided regions of the wafers. Preferred Features: Structuring of the wafers is carried out in the first solution which has a mixing ratio of concentrated ammonia, concentrated hydrogen peroxide and water of 1: 1: 1. Cleaning of the silicon wafers is carried out in the second solution which has a mixing ratio of concentrated hydrochloric acid, concentrated hydrogen peroxide solution and water of 1: 1: 5.