Analysis of Laterally Asymmetric Channel Design in Fully Depleted Double Gate (DG) SOI MOSFETs for High Performance Analog Applications

摘要

Based on analytical modeling, 2D simulation and experimental results, the work demonstrates the potential benefits of using laterally asymmetric channel design over uniform doping in DG SOI MOSFETs for achieving excellent analog performance. We show that the asymmetric channel design in DG MOSFETs makes it possible to achieve a DC gain of 80 dB, an Early voltage of over 1200 V and nearly ideal values (～38 V~(-1)) of transconductance-to-current ratio for L_(eff)=1.64μm well in excess of those reported so far. Analysis shows new opportunities for realising future high performance analog circuits with GC DG MOSFETs.