New Shift--Ratio L_(eff) extraction algorithm for Fully-Depleted SOI CMOS transistors

摘要

The Shift-& -Ratio method has been considered as one of the most accurate and consistent techniques for extracting the effective channel-length of the MOS transistor. This method allows the effective mobility to be an arbitrary function of gate voltage regardless of the series resistance. Since Fully-Depleted (FD) Silicon-On-Insulator (SOI) MOSFETs feature an expression for the drain current in the linear region which is fundamentally different from the well-known expression for bulk silicon, the algorithm can not be used for these devices. In this paper, we will present for the first time a Shift-&-Ratio extraction algorithm, which enables the extraction of the effective channel-length, mobility and series resistance of FD SOI MOSFETs, simultaneously. The new extraction algorithm will be applied on 2D simulation data in order to verify its validity.