首页> 外文会议>26th International Symposium for Testing and Failure Analysis, Nov 12-16, 2000, Bellevue, Washington >Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors
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Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors

机译:激光电压探针(LVP):一种用于倒装芯片封装微处理器的新型光学探测技术

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摘要

A novel optical probing technique to measure voltage waveforms from flip-chip packaged complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) is described. This infrared (IR) laser based technique allows signal waveform acquisition and high frequency timing measurement directly from active P-N junctions through the silicon backside substrate on IC's mounted in flip-chip stand-alone or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug & failure analysis (FA) through-put time (TPT) as compared to backside electron-beam (E-beam) probing because of the elimination of backside trenching and probe hole generation operations.
机译:描述了一种新颖的光学探测技术,用于测量倒装芯片封装的互补金属氧化物半导体(CMOS)集成电路(IC)的电压波形。这种基于红外(IR)激光的技术允许直接从有源PN结通过安装在倒装芯片独立或多芯片模块封装以及引线键合封装中的IC上的硅背面基板,进行信号波形采集和高频时序测量在其上可访问芯片背面。与背面电子束(E-beam)探测相比,该技术显着改善了硅调试和故障分析(FA)的通过时间(TPT),因为消除了背面沟槽和探针孔的产生操作。

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