首页> 外文会议>2018 Emerging Trends in Electronic Devices and Computational Techniques >Two dimensional mobility in Zinc Sulpide (ZnS) single quantum well, Zinc Selenide (ZnSe) and Zinc telluride(ZnTe) single quantum well : A comparative study
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Two dimensional mobility in Zinc Sulpide (ZnS) single quantum well, Zinc Selenide (ZnSe) and Zinc telluride(ZnTe) single quantum well : A comparative study

机译:硫化锌(ZnS)单量子阱,硒化锌(ZnSe)和碲化锌(ZnTe)单量子阱的二维迁移率:比较研究

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摘要

In this paper, the authors have calculated the two dimensional mobility in ZnS, ZnSe and ZnTe as a function of temperature taking into account the different lattice scattering mechanisms, namely Ionised Impurity scattering and Acoustic phonon scattering. A comparative study of two dimensional mobility of ZnS, ZnSe and ZnTe has been made.
机译:在本文中,作者考虑了不同的晶格散射机理,即电离杂质散射和声子声子散射,计算了ZnS,ZnSe和ZnTe在二维中随温度的变化。对ZnS,ZnSe和ZnTe的二维迁移率进行了比较研究。

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