首页> 外文会议>2016 IEEE 37th International Electronics Manufacturing Technology amp; 18th Electronics Materials and Packaging Conference >Thermal reliability analysis of through-aluminium-nitride-via substrate for high-power LED applications
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Thermal reliability analysis of through-aluminium-nitride-via substrate for high-power LED applications

机译:大功率LED应用中的氮化铝通孔基板的热可靠性分析

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For the high-power LED applications, TAV (Through-aluminum-nitride-via) substrate with a high thermal conductivity provides better heat dissipation. However, the high thermal expansion coefficient mismatch between the AlN (Aluminum nitride) and copper film may cause the failure, and thus affect the reliability of TAV substrate. The objective of this study is to evaluate the reliability of TAV substrate by measuring its strength and the thermal stress of Cu/AlN bi-material plate during the thermal loading and then by comparing those experimental results with the finite element simulation. Two reliability tests are used in this study: one is TS (Thermal shock, -40°C/125°C), the other is PCT (Pressure cook test). Also, the strength of AlN material is measured by using three-point bending test and point load test. The reliability results show that TAV substrates have delamination and cracks after TS, but there are no failure being found after PCT. The determined strengths of AlN are 350 and 650 (MPa) from three-point bending test and point load test, respectively. The results of thermal deformation measurement show that the bi-material plate has thermal residual stress change after the solder reflow process, also indicating that a linear finite element model with the stress-free temperature at 80 °C and thermal load at ΔT= -110°C and 45 C can reasonably represent the stress state of the TS test from -40 C to 125 C without considering time-dependent effect. The further results of the finite element simulation associated with strength data of AlN successfully describe those of the reliability test.
机译:对于大功率LED应用,具有高导热率的TAV(穿透式氮化铝通孔)基板可提供更好的散热效果。然而,AlN(氮化铝)与铜膜之间的高热膨胀系数失配可能会导致故障,从而影响TAV基板的可靠性。这项研究的目的是通过测量TAV基板的强度和热加载过程中Cu / AlN双材料板的热应力,然后将这些实验结果与有限元模拟进行比较,从而评估其可靠性。本研究中使用了两项可靠性测试:一项是TS(热冲击,-40°C / 125°C),另一项是PCT(压力烹饪测试)。另外,通过使用三点弯曲试验和点载荷试验来测量AlN材料的强度。可靠性结果表明,TSV后TAV基材有分层和裂纹,但PCT后未发现失效。根据三点弯曲试验和点载荷试验,确定的AlN强度分别为350和650(MPa)。热变形测量结果表明,双材料板在回流焊后具有残余热应力变化,也表明线性有限元模型的无应力温度为80°C,热负荷为ΔT= -110 °C和45 C可以合理地表示从-40 C到125 C的TS测试的应力状态,而无需考虑时间依赖性。与AlN强度数据相关的有限元模拟的进一步结果成功地描述了可靠性测试的结果。

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