随着LED光源向高功率、集成化方向发展,散热基板对于提高器件的发光效率、降低结温、提高器件的可靠度和寿命起着十分重要的作用。本文选择厚度为0.4 mm的氮化铝(AlN)作为封装基板材料,结合磁控溅射镀膜、平面丝网印刷和光刻等半导体工艺技术,在AlN基板表面完成线路设计并增加反光层。通过力学性能测试、表面反光层的反射率表征和光源老化测试,结果显示在1000小时老化后,AlN陶瓷基板上封装的光源在色温漂移、发光效率衰减和可靠性等方面都明显要好于直接将芯片绑定金属基板上的光源。同时,从晶格失配与热失配的角度分析了AlN陶瓷基板在高功率LED光源封装中的优势。%With the development of high-power and integrated LED light source, the radiating substrate plays a very important role to reduce the junction temperature, and to improve the luminous efficiency, the reliability and lifetime of the device. This paper introduced an aluminum nitride (AlN)substrate about 0.4 mm thickness as sealing material. The circuit and reflective layer were made on the AlN substrate surface using semiconductor process technology such as magnetron sputtering, flat screen printing and lithography. By mechanical testing, light reflective layer characterization and aging test, the performance concerning the color temperature drift, luminous efficiency and reliability, the sample on AlN ceramic substrate is significantly better than the chip directly on the metal substrate. In addition, the advantages of AlN ceramic substrate on the package of the high-power LED light source were analyzed from lattice mismatch and thermal mismatch.
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