Pentacene memory transistors using monolayer of ligand-removed semiconductor colloidal nano-dots as a floating gate

摘要

Summary form only given. We fabricated pentacene memory transistors, in which monolayer of semiconductor colloidal nano-dots was embedded as a floating gate. The writing time of the memory transistors was reduced to be ~1/3 when the ligand molecules of the colloidal nano-dots were removed by (NH4)2S or UV/O3 treatment. The retention time, however, became considerably short by the ligand removal. These results suggest that the ligand molecules worked as a major par of the tunneling barrier for electrons trapped in the nano-dot floating gate.