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Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high- speed circuit
Semiconductor non-volatile memory device having floating gate type field effect transistors for memory cells bipolar transistors for a high- speed circuit
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机译:具有用于存储单元的浮栅型场效应晶体管的半导体非易失性存储器件用于高速电路的双极晶体管
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摘要
A semiconductor flash memory device includes floating gate type field effect transistors serving as memory cells, field effect transistors for forming peripheral circuits and bipolar transistors for forming other peripheral circuits expected to drive heavy load at high speed, and both of the floating gate electrodes and the emitter electrodes and both of the control gate electrodes and the gate electrodes are patterned from a first doped polysilicon and a second doped polysilicon so as to simplify a process sequence for fabricating the semiconductor flash memory device.
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