Dept. of Chem. Eng., Osaka Prefecture Univ., Sakai, Japan;
copper; electrodeposition; integrated circuit interconnections; integrated circuit packaging; three-dimensional integrated circuits; Cu; TSV copper electrodeposition; driving assistance; high speed image processing; low energy consumption; medical care system; size 25 mum; size 6 mum; smartphone; through silicon via; time 10 min; time 5 min; Copper; Image processing; Medical services; Next generation networking; Silicon; System-on-chip; Through-silicon vias;
机译:高速和高质量的TSV填充,通过直接超声搅拌进行铜电沉积
机译:含添加剂的硅通孔(TSV)中铜电沉积的数值模拟和实验验证
机译:铜脉冲反向电流电镀以填充盲孔以实现3-D TSV集成
机译:5分钟TSV铜电沉积
机译:硅通孔(TSV)的高质量镀铜的电解质和添加剂的分析特性
机译:超声波综合超临界-CO2电沉积工艺对铜膜制作的影响:电化学评价
机译:通过(TSV)技术脉冲反向电沉积脉冲反向电沉积型铜型铜的实验与理论研究