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Performance analysis and threshold voltage modeling of Surrounding Gate Silicon Nanowire Transistors

机译:围栅硅纳米线晶体管的性能分析和阈值电压建模

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In this paper the threshold voltage models proposed for the modeling of Surrounding Gate Silicon Nanowire Transistors are reviewed. The control of short channel effects as a challenging aspect and performance limits are also presented in this review paper. A number of threshold voltage models based on various device parameters and their results are summarized and comparative study has been done. Here mainly the impact of the gate length, the surface potential, and the damaged zone length on the threshold voltage are analyzed. Parabolic potential approximation and perimeter weighted summation method are the two known methods for the threshold voltage analysis of surrounding gate MOSFETs. Simulation results are compared with the values obtained from standard numerical simulators.
机译:在本文中,提出了用于建模围栅硅纳米线晶体管的阈值电压模型。在这篇评论文章中还介绍了控制短通道效应这一具有挑战性的方面和性能极限。总结了基于各种器件参数的许多阈值电压模型及其结果,并进行了比较研究。在这里,主要分析栅极长度,表面电势和损坏区域长度对阈值电压的影响。抛物线电势逼近法和周长加权求和法是用于围绕栅极MOSFET的阈值电压分析的两种已知方法。仿真结果与从标准数值仿真器获得的值进行比较。

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