A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts

摘要

We demonstrated In0.53Ga0.47As channel FinFETs with self-aligned Molybdenum (Mo) contacts for the first time. By using self-aligned Mo contacts formed on in-situ doped n⁺⁺ In0.53Ga0.47As source and drain, series resistance of ∼250 Ω·μm was achieved, which is the lowest value ever reported for In0.53Ga0.47As non-planar devices. A gate-last process was used. FinFET with channel length of 500 nm and EOT of 3 nm has an ION/IOFF of over 10⁵ and peak Gm of 255 μS/μm at VD = 0.5 V.