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Single event upset immune latch circuit design using C-element

机译:使用C元素的单事件翻转免疫锁存电路设计

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Downscaling trend in CMOS technology on the one hand and reducing supply voltage of the circuits on the other hand, make devices more susceptive to soft errors such as SEU. Latch circuits are prone to be affected by SEUs. In this article, we propose a new circuit design of latch using redundancy with the aim of immunity against SEUs. According to simulation results, our design not only guaranties full immunity, but also has the advantage of occupying less area and consuming much less power and performance penalty in comparison with other SEU immune latches. The simulation results show that our solution has 65.76% reduction in power and about 50.65% reduction in propagation delay in comparison with TMR-latch.
机译:一方面,CMOS技术的尺寸缩小趋势,另一方面,电路的供电电压降低,使得设备更容易受到诸如SEU之类的软错误的影响。闩锁电路容易受到SEU的影响。在本文中,我们提出了一种新的采用冗余的锁存器电路设计,旨在防止SEU。根据仿真结果,我们的设计不仅可以保证完全的抗扰性,而且与其他SEU免疫锁存器相比,具有占用面积小,功耗和性能损失少的优点。仿真结果表明,与TMR锁存器相比,我们的解决方案的功耗降低了65.76%,传播延迟降低了约50.65%。

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