机译:用于纳米级CMOS的单事件双翻转完全免疫和瞬态脉冲可过滤锁存器设计
Anhui Univ, Sch Comp Sci & Technol, Hefei, PR, Peoples R China;
Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei, PR, Peoples R China;
Hefei Univ Technol, Sch Comp & Informat, Hefei, PR, Peoples R China;
Hefei Univ Technol, Sch Comp & Informat, Hefei, PR, Peoples R China;
Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei, PR, Peoples R China;
Charge sharing; Single event double-upset; Single event transient; Single event upset; Radiation hardening;
机译:脉冲淬火基于28 nm批量CMOS过程的模拟单事件瞬态缓解模拟单事件瞬态缓解的辐射硬化
机译:CMOS VLSI电路的基于物理的单事件瞬态脉冲宽度模型
机译:65 nm双阱和三阱CMOS技术中虚拟门隔离逻辑节点之间的单事件瞬态脉冲猝灭特性
机译:低功耗应用中的单事件双翻转自恢复和单事件瞬态脉冲可滤波锁存器设计
机译:先进CMOS技术中重离子,中子和α粒子诱导的单事件瞬态脉冲宽度的表征。
机译:0.18 µm CMOS工艺中的高速,低偏移动态锁存比较器的设计
机译:纳米CMOS技术中多节点镦粗(MNU)缓解鲁棒锁存设计