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Single event double-upset fully immune and transient pulse filterable latch design for nanoscale CMOS

机译:用于纳米级CMOS的单事件双翻转完全免疫和瞬态脉冲可过滤锁存器设计

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Technology scaling results in that, single event effects, such as single event double-upset due to double-node charge sharing, and single event transient (i.e. an invalid pulse) propagated from upstream combinational blocks, are becoming increasingly serious with technology evolution. In this paper, a single event double-upset fully immune and single event transient filterable latch is proposed in 65 nm CMOS technology. By means of a triple-input Muller C-element, which is driven through a clock gating based triple path DICE, all internal nodes and output node of the latch not only self-recover from single event upset regardless of the energy of a striking particle, but also tolerate single event double-upset when any arbitrary combination of the node pairs is affected. Further, taking advaritage of a keeper connected to the output node, the latch is insensitive to a high impedance state. Besides, making use of an embedded Schmitt trigger inverter on the propagation path, the latch also effectively filters single event transient. Simulation results have demonstrated the single event double-upset fully immunity, single event transient filterability, and cost effectiveness, i.e. approximate 60.41% area-power-delay product saving for the latch, compared with the single event double-upset fully immune DNCS-SEI latch, which cannot filter single event transient at all.
机译:技术扩展的结果是,随着技术的发展,单事件效应,例如由于双节点电荷共享引起的单事件双翻倍,以及从上游组合模块传播的单事件瞬态(即无效脉冲),变得越来越严重。本文提出了一种采用65 nm CMOS技术的单事件双翻转全免疫和单事件瞬态可滤波锁存器。通过基于时钟门控的三重路径DICE驱动的三重输入Muller C元素,锁存器的所有内部节点和输出节点不仅能够从单个事件翻转中自我恢复,而且不受撞击粒子的能量影响,但当节点对的任意组合受到影响时,也可以容忍单事件两次翻倒。此外,考虑到连接到输出节点的保持器的变化,锁存器对高阻抗状态不敏感。此外,通过在传播路径上使用嵌入式施密特触发器反相器,锁存器还可以有效地过滤单个事件瞬变。仿真结果表明,单事件双翻转完全免疫,单事件瞬态可过滤性和成本效益,即与单事件双翻转完全免疫DNCS-SEI相比,闩锁节省了约60.41%的面积功耗产品。锁存器,它根本无法过滤单个事件瞬态。

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