1/f noise in strained SiGe on Insulator MOSFETs

摘要

This paper presents low-frequency noise in Si0.75Ge0.25 and Si0.65Ge0.35 p- and n-channel strained Germanium on Insulator (SGOI) MOSFETs with 15nm thick substrates and with TiN/HfO2/SiO2 gate stacks, obtained using the enrichment technique. In strong inversion, front and back interface current noise in PMOSFET devices is described using the ΔN model, whereas NMOSFET noise is described using the ΔN-Δµ model, with a ten-fold increase in noise in some cases. In weak inversion, the noise behavior deviates from these standard models and may be described by noise coupling between the two interfaces. For both types of device, the extracted densities are approximately the same, with no significant impact from the variation of the Ge content.