Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan,TAIWAN 70101, Republic of China;
Department of Electronic Engineering, National Ilan University, No.1, Sec.1, Sheng-Lung Road, I-Lan, TAIWAN 26041, ROC;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan,TAIWAN 70101, Republic of China;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan,TAIWAN 70101, Republic of China;
Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan,TAIWAN 70101, Republic of China;
Department of Electronic Engineering, Nationa;
机译:发射极-边缘钝化的InGaP / GaAs异质结双极晶体管的温度相关特性
机译:发射极-壁厚对InGaP / GaAs异质结双极晶体管的表面复合机理的影响
机译:发射极壁厚对InGaP / GaAs异质结双极晶体管的影响
机译:发射架宽度对InGaP / GaAs异质结双极晶体管特性的影响
机译:高增益Ingap / GaAs异质结双极晶体管的低压金属化学气相沉积
机译:Ga0.35In0.65 N0.02As0.08 / GaAs双向发光吸光异质结工作于1.3μm
机译:δ掺杂薄板零电位尖峰InGaP / GaAs单异质结双极晶体管的特性
机译:InGap / InGaasN / Gaas NpN双异质结双极晶体管