A new termination structure with FLR and trench for 3.3kV SiC PiN diode

摘要

A novel termination structure with field limit ring (FLR) and trench for 3.3kV 4H-SiC PiN diode is proposed in this paper. The blocking mechanism and characteristic are analyzed by 2D numerical simulation. The results show that compared with the conventional FLR structure, the higher breakdown voltage can be obtained under the smaller termination size with the proposed termination structure, the electric field distribution of each FLR is uniform and the peak electric field intensity is in a range between 1.7 MV/cm to 2.4 MV/cm. As a result, the robustness of the proposed termination structure can be improved.