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Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique

机译：用OCVD技术测量3.3kV 4H-siC piN二极管载流子寿命温度的依赖性

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Nicolas Dheilly; Dominique Planson; Pierre Brosselard; Jawad Hassan; Pascal Bevilacqua; Dominique Tournier;
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年度 2016
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1. OCVD Lifetime Measurements on 4H-SiC Bipolar Planar Diodes: Dependences on Carrier Injection and Diode Area [J] . Giovanna Sozzi, Maurizio Puzzanghera, Giovanni Chiorboli, Electron Devices, IEEE Transactions on . 2017,第6期

机译：在4H-SiC双极平面二极管上进行OCVD寿命测量：取决于载流子注入和二极管面积
2. Al~+ Ion Implanted 4H-SiC Vertical p~+-i-n Diodes: Processing Dependence of Leakage Currents and OCVD Carrier Lifetimes [J] . R. Nipoti, M. Puzzanghera, G. Sozzi Materials science forum . 2017,第期

机译：Al〜+离子注入的4H-SiC垂直p〜+ -i-n二极管：漏电流和OCVD载流子寿命的处理依赖性
3. Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs [J] . Sapienza S., Sozzi G., Santoro D., Microelectronics & Reliability . 2020,第Octa期

机译：SIC功率MOSFET体二极管的OCVD载波寿命与温度测量与反向恢复行为的相关性
4. Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique [C] . Nicolas Dheilly, Dominique Planson, Pierre Brosselard, Silicon carbide and related materials 2008 . 2008

机译：使用OCVD技术测量3.3kV 4H-SiC PiN二极管中载流子寿命的温度依赖性
5. Microwave Instrumentation and Sensing Techniques for Quantum Efficiency and Minority-Carrier Lifetime Measurements [D] . Lu, Kyle Benjamin. 2017

机译：量子效率和少数载体寿命测量的微波仪表和传感技术
6. 60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes [O] . Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, 2021

机译：具有4H-SIC肖特基二极管的60-700 k CTAT和PTAT温度传感器
7. Electrical Characteristics and Carrier Lifetime Measurements in High Voltage 4H-SiC PiN Diodes [O] . P. A. Losee, R. J. Kumar, T. P. Chow, 2015

机译：高压4H-siC piN二极管的电气特性和载流子寿命测量

Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique

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