Vertical GaN MOSFETs with Over 1.6 kV breakdown voltage: A theoretical studying

摘要

In this paper, influences of key parameters on DC characteristics of vertical GaN MOSFETs are investigated. There is a difference between the simulation and theoretical results that the breakdown voltage increases with the p-doping concentration increasing. The structure of high voltage GaN MOSFETs is also optimized, and the breakdown voltage is up to 1602 V.