机译:具有部分GaN / Si异质结的新型垂直功率MOSFET通过击穿点传输终端技术提高击穿电压
Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;
Xidian Univ Sch Microelect Key Lab Minist Educ Wide Band Gap Semicond Mat & Devices Xian 710071 Peoples R China;
GaN; Si heterojunction; breakdown voltage; specific on-resistance; breakdown point transfer technique; interface state;
机译:一种新型SOI技术的深栅电源MOSFET,实现高击穿电压和低格子温度
机译:具有部分背势垒层的高击穿电压GaN绝缘体上异质结场效应晶体管
机译:具有p-GaN岛结构的高击穿电压GaN基垂直HFET的设计,用于电源应用
机译:改进的垂直GaN基场效应晶体管的导通电阻和击穿电压
机译:中子辐照对功率MOSFET击穿电压的影响
机译:关于碳掺杂GaN中供体/受体补偿比的建模在横向GaN功率Hemts中的单一再现击穿电压和电流塌陷
机译:新型功率MOSFET采用部分SIC / SI异质结,通过击穿点转移来改善击穿电压(BPT)终端技术
机译:电离辐射对功率mOsFET击穿电压的影响