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Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

机译：了解垂直GAN-on-Si P + N-N二极管的泄漏机制和分解限制：可靠垂直MOSFET的道路

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Kalparupa Mukherjee; Carlo De Santi; Matteo Buffolo; Matteo Borga; Shuzhen You; Karen Geens; Benoit Bakeroot; Stefaan Decoutere; Andrea Gerosa; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini;
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1. Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination [J] . Xiaolu Guo, Yaozong Zhong, Xin Chen, Applied Physics Letters . 2021,第24期

机译：垂直Gan-on-Si肖特基屏障二极管的反转泄漏和故障机制，无植入终止
2. Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices [J] . Zhou C., Jiang Q., Huang S., Electron Device Letters, IEEE . 2012,第8期

机译：AlGaN / GaN-on-Si器件中的垂直泄漏/击穿机制
3. The effect of kink and vertical leakage mechanisms in GaN-on-Si epitaxial layers [J] . Song Chunyan, Yang Xuelin, Wang Ding, Semiconductor science and technology . 2020,第8期

机译：KINK和垂直泄漏机制在GAN-ON-SI外延层中的影响
4. Vertical leakage/breakdown mechanisms in AlGaN/GaN-on-Si structures [C] . Zhou Chunhua, Jiang Qimeng, Huang Sen, Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on . 2012

机译：AlGaN / Si-GaN结构中的垂直泄漏/击穿机制
5. Defect-Mediated Carrier Transport Mechanisms in Vertical GaN p-n Diodes [D] . Robertson Bayless, Christian Andrew. 2019

机译：垂直GaN P-N二极管中的缺陷介导的载波传输机制
6. Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability [O] . Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, 2020

机译：使用双层门绝缘子在GaN-on-Si垂直沟槽MOSFET中：对性能和可靠性的影响
7. Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs [O] . Matteo Borga, Matteo Meneghini, Steve Stoffels, 2018

机译：衬底电阻率对垂直泄漏，击穿和捕获的衬底电阻率的影响

Understanding the Leakage Mechanisms and Breakdown Limits of Vertical GaN-on-Si p+n−n Diodes: The Road to Reliable Vertical MOSFETs

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