Device Characterization starting from Quasi-Static Capacitance-Voltage Characteristics for Thin-Film Transistors- Low- and High-Temperature Poly-Si, Amorphous In-Ga-Zn-O, ZnO, Polymer -

摘要

Device characterization starting from quasi-static C-V characteristics has been applied to LTPS, HTPS, a-IGZO, ZnO and polymer TFTs with appropriate assumptions. Trap densities in film and at interfaces, carrier mobility as a function of carrier density, process dependence, uniformity, degradation, etc. are discussed. It can be a common evaluation technique for all kinds of TFTs.