Abstract: As mask and reticle designs continue to evolve in complexity and resolution requirements, maskmakers are investigating what advantages negative acting electron beam resists may have in meeting these requirements. One candidate is Poly (glycidyl methacrylate-co-3- chlorostyrene), GMC, which is an advanced negative resist used for the purpose of photomask fabrication. In this paper, a statistically designed experiment will be described in which GMC resist was evaluated for use on the MEBES system. Variables explored included exposure dosage, chrome etch time, resist descum and strip time. The effects of these variables on defect density, critical dimension (CD) size and uniformity will be presented.!
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